7.1.25
Article: Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale
The object of examination is the effect of carrier localization on three properties sensitive to carrier gas density at the micrometer scale: the oscillator strength of charged excitons, local free carrier conductivity, and the Knight shift. The latter two are measured through a micrometer-scale, spatially resolved optically detected magnetic resonance (ODMR) experiment. On the surface of MBE-grown (Cd,Mn)Te quantum wells, we identify defected areas near dislocations. These regions exhibit significantly lower conductivity compared to the pristine areas, while the Knight shift values remain relatively unchanged. This behavior is attributed to carrier localization within the defected regions.
Authors: Amadeusz Dydniański, Aleksandra Łopion, Mateusz Raczyński, Tomasz Kazimierczuk, Karolina Ewa Połczyńska, Wojciech Pacuski and Piotr Kossacki
Solid State Communications, Volume 396, 2025, 115755
Published 19 November 2024
https://doi.org/10.1016/j.ssc.2024.115755